Power amplifier module and power amplification method

ABSTRACT

An amplifier transistor operates in two operation modes having different characteristics. A first bias circuit including a first bias supply transistor supplies an output current of the first bias supply transistor to the amplifier transistor as a bias current. A second bias circuit including a second bias supply transistor supplies a portion of an output current of the second bias supply transistor to the amplifier transistor as a bias current. At least one of the first bias circuit and the second bias circuit is selected and operates in accordance with an operation mode of the amplifier transistor by using a bias control signal input to a bias control terminal. The second bias circuit includes a current path along which a portion of the output current of the second bias supply transistor is returned to the second bias circuit.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority from Japanese Patent Application No.2019-195308 filed on Oct. 28, 2019. The content of this application isincorporated herein by reference in its entirety.

BACKGROUND

The present disclosure relates to a power amplifier module and a poweramplification method. A mobile communication device, such as a mobileterminal includes a power amplifier module to amplify the power of asignal to be transmitted to a base station. A mobile terminal and thelike are required to reduce power consumption to increase the length oftime during which communication is possible. To reduce powerconsumption, an envelope tracking (ET) scheme may be used for a poweramplifier module in a mobile terminal and the like. Also, an averagepower tracking (APT) scheme may be used to enhance the linearity of therelationship (AM-AM) between the input amplitude and the outputamplitude during a low-power operation. Accordingly, a single amplifiercircuit may have a mode of operation in accordance with the ET schemeand a mode of operation in accordance with the APT scheme.

Japanese Unexamined Patent Application Publication No. 2016-192590discloses a power amplifier module having a mode of operation inaccordance with the ET scheme and a mode of operation in accordance withthe APT scheme. In the power amplifier module, a bias circuit supplies abias current to the base of an amplifier transistor from a bias powersupply via a base ballast resistor. The bias circuit has a function ofmaking the resistance value of the base ballast resistor differentdepending on the operation mode of the power amplifier module.

A power amplifier module configured to operate in accordance with theAPT scheme may have two operation modes, namely, a low output mode and ahigh output mode. For example, the operation mode of the power amplifiermodule is switched between the low output mode and the high output modein accordance with the output signal level. In the low output mode andthe high output mode, the base ballast resistor of the bias circuit hasdifferent resistance values.

As described above, in the existing power amplifier module having afunction of switching between two operation modes and operating in oneof the two operation modes, the resistance value of the base ballastresistor of the bias circuit is switched in accordance with theoperation mode of the power amplifier module.

BRIEF SUMMARY

If the requirements for the characteristics of the power amplifiermodule are stringent in each of the two operation modes, it is difficultto meet the requirements merely by switching the resistance value of thebase ballast resistor of the bias circuit. Accordingly, the presentdisclosure provides a power amplifier module having a function ofoperating in at least two operation modes, in which the characteristicsof the power amplifier module for each of the two operation modes can beexploited. The present disclosure further provides a power amplificationmethod using the power amplifier module.

According to embodiments of the present disclosure, a power amplifiermodule includes an amplifier transistor that amplifies an input signaland outputs the amplified signal and that operates in at least twooperation modes having different characteristics, a first bias circuitthat includes a first bias supply transistor and that supplies an outputcurrent of the first bias supply transistor to the amplifier transistoras a bias current, a second bias circuit that includes a second biassupply transistor and that supplies a portion of an output current ofthe second bias supply transistor to the amplifier transistor as a biascurrent, and a bias control terminal that receives a bias control signalfor selecting and operating at least one of the first bias circuit andthe second bias circuit in accordance with an operation mode of theamplifier transistor. The second bias circuit includes a current pathalong which a portion of the output current of the second bias supplytransistor is returned to the second bias circuit.

According to embodiments of the present disclosure, a poweramplification method is a method for operating a power amplifier moduleto perform power amplification. The power amplifier module includes anamplifier transistor that amplifies an input signal and outputs theamplified signal, a first bias circuit that includes a first bias supplytransistor and that supplies an output current of the first bias supplytransistor to the amplifier transistor as a bias current, and a secondbias circuit that includes a second bias supply transistor and thatsupplies a portion of an output current of the second bias supplytransistor to the amplifier transistor as a bias current, the secondbias circuit including a current path along which a portion of theoutput current of the second bias supply transistor is returned to thesecond bias circuit. The power amplification method includes supplying abias current from the first bias circuit to the amplifier transistorwhen the amplifier transistor is caused to operate in accordance with anenvelope tracking scheme; and supplying a bias current from the secondbias circuit to the amplifier transistor when the amplifier transistoris caused to operate in accordance with an average power trackingscheme.

According to embodiments of the present disclosure, a poweramplification method is a method for operating a power amplifier moduleto perform power amplification. The power amplifier module includes anamplifier transistor that amplifies an input signal and outputs theamplified signal, a first bias circuit that includes a first bias supplytransistor and that supplies an output current of the first bias supplytransistor to the amplifier transistor as a bias current, and a secondbias circuit that includes a second bias supply transistor and thatsupplies a portion of an output current of the second bias supplytransistor to the amplifier transistor as a bias current, the secondbias circuit including a current path along which a portion of theoutput current of the second bias supply transistor is returned to thesecond bias circuit. The power amplification method includes switchingbetween a state of supplying a bias current from the first bias circuitto the amplifier transistor and a state of supplying a bias current fromboth the first bias circuit and the second bias circuit to the amplifiertransistor in accordance with a signal level output from the amplifiertransistor.

Since a portion of the output current of the second bias supplytransistor is returned to the second bias circuit along the currentpath, the second bias circuit can perform feedback control by using thereturned current. At least one of the first bias circuit and the secondbias circuit capable of performing feedback control is selected andoperates in accordance with the operation mode of the amplifiertransistor, and thus the characteristics of each operation mode can beutilized as desired.

Other features, elements, characteristics and advantages of the presentdisclosure will become more apparent from the following detaileddescription of embodiments of the present disclosure with reference tothe attached drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of an amplifier circuit elementin a power amplifier module according to a first exemplary embodiment;

FIG. 2 is a block diagram of the power amplifier module according to thefirst exemplary embodiment;

FIG. 3 is a block diagram of a transmission module including the poweramplifier module according to the first exemplary embodiment;

FIG. 4A is a graph illustrating an example of the relationship betweenthe gain and output power of a power-stage amplifier circuit (FIGS. 1and 2);

FIG. 4B is a graph illustrating an example of the relationship betweenthe modulation accuracy (error vector magnitude (EVM)) and output powerof the power-stage amplifier circuit (FIGS. 1 and 2);

FIG. 5 is an equivalent circuit diagram of an emitter-follower-typefirst bias circuit in a power amplifier module according to amodification of the first exemplary embodiment;

FIGS. 6A, 6B, and 6C are equivalent circuit diagrams of a feedback-typesecond bias circuit in a power amplifier module according to othermodifications of the first exemplary embodiment;

FIGS. 7A, 7B, and 7C are equivalent circuit diagrams of a feedback-typesecond bias circuit in a power amplifier module according to othermodifications of the first exemplary embodiment;

FIG. 8 is a block diagram of a power amplifier module according to asecond exemplary embodiment;

FIG. 9 is a block diagram of a transmission module including a poweramplifier module according to a third exemplary embodiment;

FIG. 10A is a timing chart illustrating the operating state of a firstbias circuit and a second bias circuit in the power amplifier moduleaccording to the third exemplary embodiment; and

FIG. 10B is a timing chart illustrating the operating state of a firstbias circuit and a second bias circuit in a power amplifier module in acomparative example.

DETAILED DESCRIPTION First Exemplary Embodiment

A power amplifier module according to a first exemplary embodiment willbe described with reference to FIGS. 1 to 3 and 4A and 4B.

FIG. 1 is an equivalent circuit diagram of an amplifier circuit element45 in the power amplifier module according to the first exemplaryembodiment. The amplifier circuit element 45 includes a power-stageamplifier circuit 10, a driver-stage amplifier circuit 11, a first biascircuit 20 and a second bias circuit 30 for the power stage, and adriver-stage bias circuit 40 for the driver stage. The amplifier circuitelement 45 further includes an input-side impedance matching circuit 12,an inter-stage impedance matching circuit 13, a plurality of externalterminals 81, 82, 83, 84, 85, 86, and 87, and a plurality of externalterminals for ground. The plurality of external terminals 81, 82, 83,84, 85, 86, and 87, and the plurality of external terminals for groundare each implemented as a Cu pillar bump, for example. The plurality ofcomponents described above are formed on a single semiconductor chip,for example. In FIG. 1, the external terminals for ground are not givenreference numerals.

A radio-frequency (RF) input signal RFin is input from the externalterminal 85. The RF input signal RFin is input to the driver-stageamplifier circuit 11 via the input-side impedance matching circuit 12. Asignal amplified by the driver-stage amplifier circuit 11 is input tothe power-stage amplifier circuit 10 via the inter-stage impedancematching circuit 13. A signal Pout amplified by the power-stageamplifier circuit 10 is output from the external terminal 87.

The power-stage amplifier circuit 10 includes an amplifier transistorQ1, a direct current (DC) cut capacitor C1, and a base ballast resistorR1. The amplifier transistor Q1 is constituted by a plurality oftransistor cells connected in parallel with each other. The DC cutcapacitor C1 and the base ballast resistor R1 are disposed for each ofthe transistor cells. The emitter of the amplifier transistor Q1 isgrounded. The collector of the amplifier transistor Q1 is connected tothe external terminal 87. Each of the plurality of transistor cells isconfigured as a heterojunction bipolar transistor (HBT), for example.

The DC cut capacitor C1 is connected to the base of the amplifiertransistor Q1, and an RF signal amplified by the driver-stage amplifiercircuit 11 is input to the base of the amplifier transistor Q1 via theDC cut capacitor C1. A base bias current is supplied to the base of theamplifier transistor Q1 from the first bias circuit 20 and the secondbias circuit 30 via the base ballast resistor R1. A power supply voltageis supplied to the collector of the amplifier transistor Q1 from theexternal terminal 87.

The driver-stage amplifier circuit 11 includes an amplifier transistorQ2, a DC cut capacitor C2, and a base ballast resistor R2. Thedriver-stage amplifier circuit 11 has a configuration similar to that ofthe power-stage amplifier circuit 10. A power supply voltage Vcc2 issupplied to the collector of the amplifier transistor Q2 from theexternal terminal 86.

The first bias circuit 20 and the second bias circuit 30 supply a biascurrent to the base of the amplifier transistor Q1 via the base ballastresistor R1. The driver-stage bias circuit 40 supplies a bias current tothe base of the amplifier transistor Q2 via the base ballast resistorR2.

Next, the circuit configuration of the first bias circuit 20 will bedescribed. The first bias circuit 20 includes a first bias supplytransistor Q11 and transistors Q12 and Q13. The first bias supplytransistor Q11 and the transistors Q12 and Q13 are each a heterojunctionbipolar transistor, by way of example.

The collector of the first bias supply transistor Q11 is connected tothe external terminal 84. A bias power supply voltage Vbat is applied tothe external terminal 84, and thus the bias power supply voltage Vbat isapplied to the collector of the first bias supply transistor Q11. Theemitter of the first bias supply transistor Q11 is connected to the baseballast resistor R1 via an output resistor R12. The output resistor R12may be removed. The first bias supply transistor Q11 constitutes anemitter-follower circuit, and all of the emitter current is supplied tothe amplifier transistor Q1 as a bias current. A circuit that suppliesall of the emitter current to the amplifier transistor Q1 as a biascurrent, such as the first bias circuit 20, is referred to herein as“emitter-follower-type bias circuit”.

The base and collector of each of the transistors Q12 and Q13 areshort-circuited. A connection of a transistor whose base and collectorare short-circuited is referred to as diode connection, and each of thetransistors Q12 and Q13 operates as a diode.

A resistor R11 and the transistors Q12 and Q13 are connected in seriesin this order between the external terminal 81 and ground. A forwardvoltage is applied to the diodes constituted by the transistors Q12 andQ13. The external terminal 81 is connected to a variable current source.The variable current source generates, for example, a bias controlsignal IB1 for the amount of current corresponding to the output powerof the power-stage amplifier circuit 10 and outputs the bias controlsignal IB1. Since the transistors Q12 and Q13 operate as diodes, avoltage of a predetermined level (for example, about 2.6 V) is generatedbetween the collector and base of the transistor Q12.

The base of the first bias supply transistor Q11 and the base of thetransistor Q12 are connected to each other. The base of the first biassupply transistor Q11 and the base of the transistor Q12 are groundedvia a bypass capacitor Cll.

Next, the operation of the first bias circuit 20 will be described.

When the bias control signal IB1 is supplied from the variable currentsource connected to the external terminal 81, a voltage corresponding tothe amount of voltage drop generated across a series circuit of thetransistors Q12 and Q13 is applied to the base of the first bias supplytransistor Q11. An emitter current (output current) flows through thefirst bias supply transistor Q11 in accordance with the voltage appliedto the base of the first bias supply transistor Q11. The emitter currentis supplied to the base of the amplifier transistor Q1 via the outputresistor R12 and the base ballast resistor R1 as a bias current.

When the bias control signal IB1 is not supplied to the externalterminal 81, the first bias supply transistor Q11 is turned off.Accordingly, no bias current is supplied to the base of the amplifiertransistor Q1 from the first bias circuit 20.

Next, the circuit configuration of the second bias circuit 30 will bedescribed. The second bias circuit 30 includes a second bias supplytransistor Q21 and transistors Q22 and Q23. The second bias supplytransistor Q21 and the transistors Q22 and Q23 are each a heterojunctionbipolar transistor, by way of example.

The collector of the second bias supply transistor Q21 is connected tothe external terminal 84, and the bias power supply voltage Vbat isapplied to the collector of the second bias supply transistor Q21. Theemitter of the second bias supply transistor Q21 is connected to thebase ballast resistor R1 and is also connected to the base of thetransistor Q23 via a resistor R22. The resistor R22 functions as acurrent path along which a portion of the emitter current of the secondbias supply transistor Q21 is returned to the second bias circuit 30. Acircuit including a current path along which a portion of the emittercurrent of the second bias supply transistor Q21 is returned to thesecond bias circuit 30, such as the second bias circuit 30, is referredto herein as “feedback-type bias circuit”.

The transistor Q22 is diode-connected and operates as a diode. The baseand collector of the transistor Q23 are connected to each other via acapacitor C22. A resistor R21 and the transistors Q22 and Q23 areconnected in series in this order between the external terminal 82 andground. Each of the transistors Q22 and Q23 is connected in such amanner that the emitter thereof is close to ground.

The external terminal 82 is connected to a variable current source, anda bias control signal IB2, which is a constant current, is supplied fromthe external terminal 82 to the resistor R21. The base of the secondbias supply transistor Q21 and the base of the transistor Q22 areconnected to each other. The base of the second bias supply transistorQ21 and the base of the transistor Q22 are grounded via a bypasscapacitor C21.

Next, the operation of the second bias circuit 30 will be described.

When the bias control signal IB2 is supplied from the variable currentsource connected to the external terminal 82, a voltage corresponding tothe amount of voltage drop generated across the series circuit of thetransistors Q22 and Q23 is applied to the base of the second bias supplytransistor Q21. An emitter current (output current) flows through thesecond bias supply transistor Q21 in accordance with the voltage appliedto the base of the second bias supply transistor Q21. A portion of theemitter current is supplied to the base of the amplifier transistor Q1via the base ballast resistor R1 as a bias current.

When the output power of the amplifier transistor Q1 increases, the biascurrent supplied from the emitter of the second bias supply transistorQ21 to the base of the amplifier transistor Q1 increases, resulting inan increase in the emitter voltage of the second bias supply transistorQ21. At this time, the base voltage of the transistor Q23 also increasesthrough the resistor R22. Accordingly, the amount of current flowingthrough the transistor Q23 increases, and the collector voltage of thetransistor Q22 decreases. In response to the decrease in the collectorvoltage of the transistor Q22, the base voltage of the second biassupply transistor Q21 decreases, and the amount of current flowingthrough the second bias supply transistor Q21 decreases.

Accordingly, in the second bias circuit 30, when the output power of theamplifier transistor Q1 increases and the emitter current of the secondbias supply transistor Q21 increases, negative feedback control todecrease the emitter current of the second bias supply transistor Q21 isperformed through the resistor R22. As a result, the emitter current ofthe second bias supply transistor Q21 is stabilized.

When the bias control signal IB2 is not supplied to the externalterminal 82, the second bias supply transistor Q21 is turned off. Thus,no bias current is supplied to the base of the amplifier transistor Q1from the second bias circuit 30.

The capacitor C22 connects an RF signal flowing from the power-stageamplifier circuit 10 to ground for alternating current (AC) via thetransistor Q23. Thus, the base current of the transistor Q23 is lessaffected by the RF signal.

Next, the circuit configuration of the driver-stage bias circuit 40 willbe described. The driver-stage bias circuit 40 includes a bias supplytransistor Q31, a resistor R31, transistors Q32 and Q33, and a bypasscapacitor C31. The basic circuit configuration of the driver-stage biascircuit 40 is substantially the same as the circuit configuration of thefirst bias circuit 20.

A bias control signal IB3 is supplied to the resistor R31 from avariable current source connected to the external terminal 83. Theemitter current of the bias supply transistor Q31 is supplied to thebase of the amplifier transistor Q2 of the driver-stage amplifiercircuit 11 as a bias current.

FIG. 2 is a block diagram of a power amplifier module 50 according tothe first exemplary embodiment. The power amplifier module 50 accordingto the first exemplary embodiment includes the amplifier circuit element45 (FIG. 1), an output-side impedance matching circuit 60, and inductorsL1 and L2. In FIG. 2, some of the components of the amplifier circuitelement 45 are not illustrated. The amplifier circuit element 45, theoutput-side impedance matching circuit 60, the inductors L1 and L2, andso on are mounted on a common module substrate. The power amplifiermodule 50 includes bias control terminals 51, 52, and 53, a driver-stagepower supply terminal 54, a power-stage power supply terminal 55, asignal input terminal 56, and a signal output terminal 57. The biascontrol terminals 51, 52, and 53, the driver-stage power supply terminal54, the power-stage power supply terminal 55, the signal input terminal56, and the signal output terminal 57 are mounted on the modulesubstrate.

The external terminal 85 of the amplifier circuit element 45 isconnected to the signal input terminal 56. The RF input signal RFin isinput to the amplifier circuit element 45 from the signal input terminal56. The bias control terminal 53 is connected to the external terminal83 of the amplifier circuit element 45. The bias control signal IB3 issupplied from the bias control terminal 53 to the driver-stage biascircuit 40 of the amplifier circuit element 45. The external terminal 86of the amplifier circuit element 45 is connected to the driver-stagepower supply terminal 54 via the inductor L2. The power supply voltageVcc2 is supplied to the collector of the amplifier transistor Q2 of thedriver-stage amplifier circuit 11 via the inductor L2.

The external terminals 81, 82, and 83 of the amplifier circuit element45 are connected to the bias control terminals 51, 52, and 53,respectively. The bias control terminals 51, 52, and 53 are connected toan external bias control circuit 70. The bias control circuit 70includes an operation mode notification terminal 71. The bias controlcircuit 70 selects at least one of the bias control terminals 51 and 52in accordance with an operation mode notification signal MODE providedto the operation mode notification terminal 71. The bias control circuit70 supplies the bias control signal IB1 to the first bias circuit 20 inresponse to the selection of the bias control terminal 51, and suppliesthe bias control signal IB2 to the second bias circuit 30 in response tothe selection of the bias control terminal 52. Further, the bias controlcircuit 70 supplies the bias control signal IB3 to the driver-stage biascircuit 40 via the bias control terminal 53 and the external terminal83.

The external terminal 87 of the amplifier circuit element 45 isconnected to the power-stage power supply terminal 55 via the inductorL1. A power supply voltage Vreg is supplied to the collector of theamplifier transistor Q1 of the power-stage amplifier circuit 10 via theinductor L1. The external terminal 87 is further connected to the signaloutput terminal 57 via the output-side impedance matching circuit 60. AnRF signal amplified by the power-stage amplifier circuit 10 is outputfrom the signal output terminal 57 as an RF output signal RFout.

FIG. 3 is a block diagram of a transmission module including the poweramplifier module 50 according to the first exemplary embodiment. Thetransmission module includes a baseband section 90, an RF section 91,the power amplifier module 50, a front-end section 92, an antenna 93,the bias control circuit 70, and a power supply circuit 94.

The baseband section 90 modulates an input signal, such as an audiosignal or a data signal, in accordance with a predetermined modulationscheme and outputs the modulated signal. For example, the basebandsection 90 performs orthogonal modulation of an input signal and outputsan IQ signal (in-phase (I) signal and quadrature (Q) signal) as amodulated signal. Further, the baseband section 90 outputs the operationmode notification signal MODE specifying the operation mode of the poweramplifier module 50 to the bias control circuit 70 and the power supplycircuit 94.

For example, the operation mode notification signal MODE indicateseither a first operation mode or a second operation mode. The firstoperation mode is a mode for operating the power-stage amplifier circuit10 (FIGS. 1 and 2) of the power amplifier module 50 in accordance withan envelope tracking (ET) scheme, and the second operation mode is amode for operating the power-stage amplifier circuit 10 (FIGS. 1 and 2)of the power amplifier module 50 in accordance with an average powertracking (APT) scheme. For example, when the output level of thepower-stage amplifier circuit 10 (FIGS. 1 and 2) of the power amplifiermodule 50 is greater than or equal to a predetermined level, thebaseband section 90 notifies the bias control circuit 70 and the powersupply circuit 94 of the first operation mode corresponding to the ETscheme. When the output level of the power amplifier module 50 is lessthan the predetermined level, the baseband section 90 notifies the biascontrol circuit 70 and the power supply circuit 94 of the secondoperation mode corresponding to the APT scheme.

The RF section 91 generates, from the IQ signal input from the basebandsection 90, the RF input signal RFin for performing wirelesstransmission and outputs the RF input signal RFin to the power amplifiermodule 50. The power amplifier module 50 amplifies the RF input signalRFin in accordance with the operation mode and outputs the RF outputsignal RFout to the front-end section 92. In the operation in the firstoperation mode corresponding to the ET scheme, the power-stage amplifiercircuit 10 (FIGS. 1 and 2) is supplied with a bias current from theemitter-follower-type first bias circuit 20. In the operation in thesecond operation mode corresponding to the APT scheme, the power-stageamplifier circuit 10 (FIGS. 1 and 2) is supplied with a bias currentfrom the feedback-type second bias circuit 30.

The power supply circuit 94 supplies one of a first power supply voltagefor the ET scheme and a second power supply voltage for the APT schemeto the power amplifier module 50 as the power supply voltage Vreg inaccordance with the operation mode notification signal MODE. The powersupply circuit 94 is supplied with a power supply voltage Vcc1.

Voltage control signals CTRL and CTR2 for controlling the power supplyvoltage Vreg are supplied from the baseband section 90 to the powersupply circuit 94. When the power amplifier module 50 is caused tooperate in the first operation mode corresponding to the ET scheme, thebaseband section 90 detects the amplitude level of the modulated signaland outputs the voltage control signal CTR1 corresponding to the changein the amplitude level of the modulated signal to the power supplycircuit 94. When the power amplifier module 50 is caused to operate inthe second operation mode corresponding to the APT scheme, the basebandsection 90 detects the average power of the modulated signal and outputsthe voltage control signal CTR2 corresponding to the average power ofthe modulated signal to the power supply circuit 94.

In response to being notified of the first operation mode correspondingto the ET scheme by using the operation mode notification signal MODE,the power supply circuit 94 changes the power supply voltage Vreg with achange in the amplitude level of the modulated signal in accordance withthe voltage control signal CTR1. In response to being notified of thesecond operation mode corresponding to the APT scheme by using theoperation mode notification signal MODE, the power supply circuit 94changes the power supply voltage Vreg with a change in the average powerof the modulated signal in accordance with the voltage control signalCTR2.

In response to being notified of the first operation mode correspondingto the ET scheme by using the operation mode notification signal MODE,the bias control circuit 70 supplies the bias control signal IB1 to thefirst bias circuit 20 (FIGS. 1 and 2) and does not supply the biascontrol signal IB2 to the second bias circuit 30 (FIGS. 1 and 2). Inresponse to being notified of the second operation mode corresponding tothe APT scheme by using the operation mode notification signal MODE, thebias control circuit 70 supplies the bias control signal IB2 to thesecond bias circuit 30 (FIGS. 1 and 2) and does not supply the biascontrol signal IB1 to the first bias circuit 20 (FIGS. 1 and 2).

The front-end section 92 performs a filtering process on the input RFoutput signal RFout. An RF signal output from the front-end section 92is transmitted from the antenna 93. Further, the front-end section 92switches between an RF reception signal received by the antenna 93 andan RF signal to be transmitted to perform transmission or reception.

Next, advantages of the first exemplary embodiment will be describedwith reference to FIGS. 4A and 4B.

FIG. 4A is a graph illustrating an example of the relationship betweenthe gain and output power of the power-stage amplifier circuit 10 (FIGS.1 and 2). The horizontal axis represents output power in “dBm”, and thevertical axis represents gain in “dB”. FIG. 4B is a graph illustratingan example of the relationship between the modulation accuracy (errorvector magnitude (EVM)) and output power of the power-stage amplifiercircuit 10 (FIGS. 1 and 2). The horizontal axis represents output powerin “dBm”, and the vertical axis represents EVM in “%”. In the graphsillustrated in FIGS. 4A and 4B, the solid line indicates characteristicsin the first operation mode corresponding to the ET scheme, and thebroken line indicates characteristics in the second operation modecorresponding to the APT scheme.

The bias current from the first bias circuit 20 (FIGS. 1 and 2) is setso that gain expansion is achieved in a high output power region whenthe power-stage amplifier circuit 10 (FIGS. 1 and 2) operates in thefirst operation mode corresponding to the ET scheme. In the region wheregain expansion is achieved, the gain shows a peak value at a peak pointPP. It is desirable that the basic design of an amplifier circuit beperformed using, as a compression point CP, a point at which the gain isdecreased by a predetermined value, for example, about 2 dB, relative tothe gain at the peak point PP. In this way, gain expansion is achievedby using the emitter-follower-type first bias circuit 20 (FIGS. 1 and2), thereby making it easy to determine the gain at the peak point PP.As a result, advantageously, the compression point CP is stabilized.

The gain expansion causes a decrease in the linearity of therelationship (AM-AM) between the amplitude of the input signal and theamplitude of the output signal. Consequently, as illustrated in FIG. 4B,the EVM deteriorates in a high output power region. When the power-stageamplifier circuit 10 is caused to operate in the first operation modecorresponding to the ET scheme, it is desirable to perform digitalpredistortion (DPD) to compensate for the decrease in the linearity ofAM-AM. DPD can suppress a decrease in the linearity of AM-AM in theoverall amplifier circuit from the baseband section 90 (FIG. 3) to thesignal output terminal 57 of the power amplifier module 50 (FIG. 2).

When the power-stage amplifier circuit 10 is caused to operate in thesecond operation mode corresponding to the APT scheme, gain expansionusing an emitter-follower-type bias circuit causes a decrease in thelinearity of AM-AM, resulting in deterioration of the EVM. In general,DPD is not performed in the operation of an amplifier circuit inaccordance with the APT scheme. Thus, the deterioration of the EVMcaused by the gain expansion is noticeable.

In the first exemplary embodiment, when the power-stage amplifiercircuit 10 is caused to operate in the second operation modecorresponding to the APT scheme, the feedback-type second bias circuit30 (FIGS. 1 and 2) is used. The increase in the emitter current of thesecond bias supply transistor Q21, which is caused by the self-bias whenthe output power is increased, is suppressed by the negative feedbackcontrol of the second bias circuit 30. Accordingly, as illustrated inFIG. 4A, gain expansion is less likely to occur. Consequently, asillustrated in FIG. 4B, the deterioration of the EVM can be suppressed.Since the deterioration of the EVM is suppressed, it is possible toachieve a power amplifier module that meets stringent EVM requirementsfor the fifth-generation mobile communication system.

Next, a modification of the first exemplary embodiment will be describedwith reference to FIG. 5. The first bias circuit 20 in the poweramplifier module 50 according to the first exemplary embodiment, whichis used for ET, is not limited to the circuit configuration illustratedin FIG. 1. In the following modification, the circuit configuration ofthe first bias circuit 20 is different from the circuit configuration ofthe first bias circuit 20 of the power amplifier module 50 according tothe first exemplary embodiment. The first bias circuit 20 may be a biascircuit designed such that all of the emitter current output from thefirst bias supply transistor Q11 is supplied to the power-stageamplifier circuit 10 as a bias current to achieve gain expansion.

FIG. 5 is an equivalent circuit diagram of the emitter-follower-typefirst bias circuit 20 in the power amplifier module 50 according to themodification of the first exemplary embodiment. In this modification,the emitter-follower-type first bias circuit 20 includes diodes D12 andD13 in place of the transistors Q12 and Q13 in the first bias circuit 20(FIG. 1) of the power amplifier module 50 according to the firstexemplary embodiment. In this modification, a voltage corresponding tothe amount of voltage drop generated across the two diodes D12 and D13,which are connected in series, is applied to the base of the first biassupply transistor Q11.

Also, in this modification, a base voltage of a predetermined level canbe supplied to the base of the first bias supply transistor Q11 inaccordance with the bias control signal IB1.

Next, other modifications of the first exemplary embodiment will bedescribed with reference to FIGS. 6A to 7C. The second bias circuit 30in the power amplifier module 50 according to the first exemplaryembodiment, which is used for APT, is not limited to the circuitconfiguration illustrated in FIG. 1. In the following modifications, thecircuit configuration of the second bias circuit 30 is different fromthe circuit configuration of the second bias circuit 30 of the poweramplifier module 50 according to the first exemplary embodiment. Thesecond bias circuit 30 may be a bias circuit including a current pathalong which a portion of the emitter current output from the second biassupply transistor Q21 is returned to the second bias circuit 30 suchthat negative feedback control is performed on the emitter current ofthe second bias supply transistor Q21. The second bias circuit 30 can bea bias circuit designed such that no gain expansion can be achieved.

FIGS. 6A to 7B are equivalent circuit diagrams of the feedback-typesecond bias circuit 30 in the power amplifier module 50 according tomodifications of the first exemplary embodiment. The following describesthe differences from the second bias circuit 30 of the power amplifiermodule 50 according to the first exemplary embodiment.

In the modification illustrated in FIG. 6A, the capacitor C22 isconnected between the base of the transistor Q23 and ground. In thisconfiguration, an RF signal flowing from the power-stage amplifiercircuit 10 is connected to ground for AC without necessarily theintervention of the transistor Q23.

In the modification illustrated in FIG. 6B, the transistor Q22 (FIG. 1)is removed, and the collector of the transistor Q23 is connecteddirectly to the resistor R21. The collector of the transistor Q23 isconnected to the base of the second bias supply transistor Q21. In thisconfiguration, a voltage corresponding to the amount of voltage dropacross the transistor Q23 is applied to the base of the second biassupply transistor Q21.

In the modification illustrated in FIG. 6C, as in the modificationillustrated in FIG. 6A, the capacitor C22 is connected between the baseof the transistor Q23 and ground. Also, as in the modificationillustrated in FIG. 6B, the transistor Q22 (FIG. 1) is removed.

In the modification illustrated in FIG. 7A, the emitter of the secondbias supply transistor Q21 is grounded via the resistor R22 and atransistor Q24. The transistor Q23 is diode-connected, and the base ofthe transistor Q24 is connected to the base of the transistor Q23. Thetransistor Q23 and the transistor Q24 constitute a current mirror.

Also, in this modification, like the second bias circuit 30 (FIG. 1) inthe power amplifier module 50 according to the first exemplaryembodiment, the increase in the bias current caused by the self-biaswhen the output power increases is suppressed by the negative feedbackcontrol of the second bias circuit 30. Consequently, advantageously,gain expansion is less likely to occur.

In the modification illustrated in FIG. 7B, the resistor R22 of thesecond bias circuit 30 is connected at a different location from that inthe modification illustrated in FIG. 7A. In this modification, theresistor R22 is connected between the base of the transistor Q24 and thebase of the transistor Q23. Also, in this modification, as in themodification illustrated in FIG. 7A, advantageously, gain expansion isless likely to occur when the output power increases.

In the modification illustrated in FIG. 7C, the emitter of the secondbias supply transistor Q21 is grounded via a diode-connected transistorQ24. The base of the transistor Q24 and the base of the transistor Q23are connected, and the transistor Q24 and the transistor Q23 form acurrent mirror.

Also, in this modification, as in the modification illustrated in FIG.7A, advantageously, gain expansion is less likely to occur when theoutput power increases.

Next, still another modification of the first exemplary embodiment willbe described.

In the first exemplary embodiment, the first bias circuit 20 (FIG. 1)and the second bias circuit 30 (FIG. 1) are each implemented as aheterojunction bipolar transistor. Alternatively, each of the first biascircuit 20 (FIG. 1) and the second bias circuit 30 (FIG. 1) may beimplemented as a homojunction bipolar transistor, a junctionfield-effect transistor, a metal-insulator-semiconductor (MIS)field-effect transistor, a metal-semiconductor (MES) field-effecttransistor, or the like.

In the first exemplary embodiment, furthermore, the external terminal 81of the first bias circuit 20 (FIG. 1) and the external terminal 82 ofthe second bias circuit 30 (FIG. 1) are each connected to a variablecurrent source. Alternatively, the external terminal 81 of the firstbias circuit 20 (FIG. 1) and the external terminal 82 of the second biascircuit 30 (FIG. 1) may be each connected to a variable voltage source.

In the first exemplary embodiment, furthermore, the power-stageamplifier circuit 10 of the power amplifier module 50 is capable ofoperating in two operation modes. Alternatively, the power-stageamplifier circuit 10 may be capable of operating in three or moreoperation modes. The two operation modes include the first operationmode corresponding to the ET scheme and the second operation modecorresponding to the APT scheme. Alternatively, at least two operationmodes with different relationships between the gain and output level ofthe power-stage amplifier circuit 10 may be used. For example, anoperation mode based on a fixed voltage scheme or an operation modebased on a variable voltage scheme may be used.

Second Exemplary Embodiment

Next, a power amplifier module 50 according to a second exemplaryembodiment will be described with reference to FIG. 8. In the following,the configuration common to the power amplifier module 50 according tothe first exemplary embodiment (FIGS. 1 and 2) will not be described.

FIG. 8 is a block diagram of the power amplifier module 50 according tothe second exemplary embodiment. In the first exemplary embodiment (FIG.2), the bias control circuit 70 is connected to the bias controlterminals 51, 52, and 53 of the power amplifier module 50. In the secondexemplary embodiment, the bias control circuit 70 is mounted on the samemodule substrate as that on which the amplifier circuit element 45 ismounted, and is included in the power amplifier module 50. In this case,the external terminals 81, 82, and 83 of the amplifier circuit element45 may be regarded as bias control terminals. The operation modenotification terminal 71 is included in the external terminals of thepower amplifier module 50.

Next, advantages of the second exemplary embodiment will be described.

The second exemplary embodiment also achieves advantages similar tothose in the first exemplary embodiment. Specifically, when thepower-stage amplifier circuit 10 (FIG. 1) is caused to operate in thefirst operation mode corresponding to the ET scheme, the gain at thepeak point PP (FIG. 4A) is easily determined. As a result,advantageously, the compression point CP (FIG. 4A) is stabilized. Whenthe power-stage amplifier circuit 10 (FIG. 1) is caused to operate inthe second operation mode corresponding to the APT scheme, thedeterioration of the EVM can be suppressed.

Third Exemplary Embodiment

Next, a power amplifier module according to a third exemplary embodimentwill be described with reference to FIGS. 9, 10A, and 10B. In thefollowing, the configuration common to the power amplifier moduleaccording to the first exemplary embodiment (FIGS. 1, 2, and 3) will notbe described.

In the first exemplary embodiment, the two operation modes of thepower-stage amplifier circuit 10 (FIGS. 1 and 2) include the firstoperation mode corresponding to the ET scheme and the second operationmode corresponding to the APT scheme. In the third exemplary embodiment,the first operation mode of the power-stage amplifier circuit 10 (FIGS.1 and 2) is an operation mode in which an RF output signal has low power(hereinafter referred to as “low-power operation mode”), and the secondoperation mode of the power-stage amplifier circuit 10 (FIGS. 1 and 2)is an operation mode in which an RF output signal has relatively high(hereinafter referred to as “high-power operation mode”). The low-poweroperation mode and the high-power operation mode have differentrelationships between the gain and output level of the power-stageamplifier circuit 10. The relationship between the gain and output levelof the power-stage amplifier circuit 10 in the high-power operation modeis different from the relationship between the gain and output level ofthe power-stage amplifier circuit 10 in the low-power operation modesuch that in the high-power operation mode, a high gain is maintained ata higher output level than in the low-power operation mode.

FIG. 9 is block diagram of a transmission module including the poweramplifier module 50 according to the third exemplary embodiment. In thefirst exemplary embodiment, the power supply voltage Vreg is suppliedfrom the power supply circuit 94 (FIG. 3) to the power-stage amplifiercircuit 10 of the power amplifier module 50 (FIG. 1). The power supplyvoltage Vreg is switched between the first power supply voltage for theET scheme and the second power supply voltage for the APT scheme inaccordance with the operation mode of the power-stage amplifier circuit10 (FIG. 1). In the third exemplary embodiment, the power supply voltageVcc1 for the APT scheme is supplied to the power-stage amplifier circuit10 of the power amplifier module 50 (FIG. 1). That is, the power-stageamplifier circuit 10 of the power amplifier module 50 operates inaccordance with the APT scheme.

The baseband section 90 outputs the operation mode notification signalMODE to the bias control circuit 70 in accordance with the signal level(the magnitude of the power) of the RF output signal RFout. For example,when the RF output signal RFout has a level greater than or equal to apredetermined level, the baseband section 90 notifies the bias controlcircuit 70 of the high-power operation mode as the operation mode. Whenthe RF output signal RFout has a level less than the predeterminedlevel, the baseband section 90 notifies the bias control circuit 70 ofthe low-power operation mode as the operation mode.

The bias control circuit 70 supplies at least one of the bias controlsignals IB1 and IB2 to the power amplifier module 50 in accordance withthe operation mode indicated by the operation mode notification signalMODE. In this exemplary embodiment, in response to being notified of thelow-power operation mode as the operation mode, the bias control circuit70 supplies the bias control signal IB1 and does not supply the biascontrol signal IB2. Accordingly, the first bias circuit 20 (FIG. 1)operates, whereas the second bias circuit 30 (FIG. 1) does not operate.In response to being notified of the high-power operation mode as theoperation mode, the bias control circuit 70 supplies both the biascontrol signals IB1 and IB2. Accordingly, both the first bias circuit 20(FIG. 1) and the second bias circuit 30 (FIG. 1) operate.

Next, advantages of the third exemplary embodiment will be describedwith reference to FIGS. 10A and 10B.

FIG. 10A is a timing chart illustrating the operating state of the firstbias circuit 20 (FIG. 1) and the second bias circuit 30 (FIG. 1) in thepower amplifier module 50 according to the third exemplary embodiment.FIG. 10A illustrates an example in which a low-power operation mode LPMis switched to a high-power operation mode HPM and then the high-poweroperation mode HPM is switched to the low-power operation mode LPM.

The first bias circuit 20 constantly operates, regardless of theoperation mode. The second bias circuit 30 operates only during a periodcorresponding to the high-power operation mode HPM. A delay time Tdoccurs between the start of supply of the bias control signal IB2 andthe start of the operation of the second bias circuit 30. During thedelay time Td, a bias current is supplied to the power-stage amplifiercircuit 10 only from the first bias circuit 20.

FIG. 10B is a timing chart illustrating the operating state of the firstbias circuit 20 and the second bias circuit 30 in a power amplifiermodule in a comparative example. In the comparative example, the biascontrol circuit 70 (FIG. 9) supplies the bias control signal IB1 only tothe first bias circuit 20 during a period corresponding to the low-poweroperation mode LPM, and supplies the bias control signal IB2 only to thesecond bias circuit 30 during a period corresponding to the high-poweroperation mode HPM.

When the operation mode is switched from the low-power operation modeLPM to the high-power operation mode HPM, the operation of the firstbias circuit 20 is stopped substantially instantaneously. A delay timeTd occurs until the operation of the second bias circuit 30 is started.Accordingly, there is a time period during which the first bias circuit20 and the second bias circuit 30 are not in operation. Also, when theoperation mode is switched from the high-power operation mode HPM to thelow-power operation mode LPM, there is a time period during which thefirst bias circuit 20 and the second bias circuit 30 are not inoperation.

In the period during which the first bias circuit 20 and the second biascircuit 30 are not in operation, the power amplifier module 50 does notperform amplification, and thus the RF output signal RFout is notoutput. That is, instantaneous interruption of a transmission signaloccurs.

In the third exemplary embodiment, in contrast, the first bias circuit20 constantly operates. Thus, instantaneous interruption of atransmission signal can be prevented.

In particular, when the feedback-type second bias circuit 30 is in useduring operation at low temperatures, at the time when the power-stageamplifier circuit 10 (FIG. 1) starts an amplification operation inresponse to the rise edge of the waveform of the RF input signal RFin,feedback control becomes unstable, and the EVM is likely to deteriorate.In the third exemplary embodiment, the emitter-follower-type first biascircuit 20 is caused to operate in the low-power operation mode. Thiscan suppress the deterioration of the EVM at the rise time of thewaveform of the RF input signal RFin. In the low-power operation mode,furthermore, there is substantially no influence of the self-bias. Thus,no gain expansion occurs, resulting in high linearity of AM-AM beingmaintained.

When the operation mode is the high-power operation mode, thefeedback-type second bias circuit 30 also operates in addition to thefirst bias circuit 20. Thus, gain expansion caused by an increase in thepower of the RF output signal RFout is suppressed, resulting in highlinearity of AM-AM being maintained.

In the first exemplary embodiment, the output resistor R12 of the firstbias circuit 20 (FIG. 1) may be removed. In contrast, as in the thirdexemplary embodiment, when there is a period during which both the firstbias circuit 20 and the second bias circuit 30 are caused to operatesimultaneously, the output resistor R12 can be connected between thefirst bias supply transistor Q11 and the base ballast resistor R1.

Next, a modification of the third exemplary embodiment will bedescribed.

In the third exemplary embodiment, the emitter-follower-type first biascircuit 20 is caused to operate constantly, regardless of the operationmode. Alternatively, the operation of the first bias circuit 20 may bestopped in the high-power operation mode on the condition that noinstantaneous interruption occurs at the time of switching betweenoperation modes. For example, the operation of the first bias circuit 20may be stopped at a point in time when a longer time than the delay timeTd (FIGS. 10A and 10B) elapses from the point in time when the low-poweroperation mode is switched to the high-power operation mode.

It is to be understood that the exemplary embodiments described aboveare illustrative and that configurations provided in differentembodiments may be partially replaced or combined. Similar operationaleffects achieved with similar configurations in a plurality ofembodiments are not described in the individual embodiments. Inaddition, the present disclosure is not limited to the exemplaryembodiments described above. It will be apparent to a person skilled inthe art that, for example, various changes, improvements, combinations,and so on may be made.

While embodiments of the disclosure have been described above, it is tobe understood that variations and modifications will be apparent tothose skilled in the art without necessarily departing from the scopeand spirit of the disclosure. The scope of the disclosure, therefore, isto be determined solely by the following claims.

What is claimed is:
 1. A power amplifier module comprising: an amplifiertransistor configured to amplify an input signal and to output anamplified signal, and configured to operate in at least two operationmodes having different characteristics; a first bias circuit comprisinga first bias supply transistor, the first bias circuit being configuredto supply an output current of the first bias supply transistor to theamplifier transistor as a bias current; a second bias circuit comprisinga second bias supply transistor and a current path, the second biascircuit being configured to supply a first portion of an output currentof the second bias supply transistor to the amplifier transistor as thebias current and to return a second portion of the output current viathe current path; and a bias control terminal configured to receive abias control signal, the first and second bias circuits being configuredto be selected and operated in accordance with the operation mode of theamplifier transistor based on the bias control signal.
 2. The poweramplifier module according to claim 1, wherein the at least twooperation modes have different relationships between a gain and anoutput level.
 3. The power amplifier module according to claim 1,wherein the second bias circuit is configured to decrease the outputcurrent of the second bias supply transistor in response to an increasein current flowing through the current path.
 4. The power amplifiermodule according to claim 2, wherein the second bias circuit isconfigured to decrease the output current of the second bias supplytransistor in response to an increase in current flowing through thecurrent path.
 5. The power amplifier module according to claim 1,wherein: when the amplifier transistor operates in a first operationmode, a first power supply voltage is supplied to the amplifiertransistor, when the amplifier transistor operates in a second operationmode, a second power supply voltage is supplied to the amplifiertransistor, the second power supply voltage being different than thefirst power supply voltage, and the power amplifier module furthercomprises: an operation mode notification terminal configured to receivea notification of an operation mode of the amplifier transistor; and abias control circuit configured to render the first bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thefirst operation mode, and configured to render the second bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thesecond operation mode.
 6. The power amplifier module according to claim2, wherein: when the amplifier transistor operates in a first operationmode, a first power supply voltage is supplied to the amplifiertransistor, when the amplifier transistor operates in a second operationmode, a second power supply voltage is supplied to the amplifiertransistor, the second power supply voltage being different than thefirst power supply voltage, and the power amplifier module furthercomprises: an operation mode notification terminal configured to receivea notification of an operation mode of the amplifier transistor; and abias control circuit configured to render the first bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thefirst operation mode, and configured to render the second bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thesecond operation mode.
 7. The power amplifier module according to claim3, wherein: when the amplifier transistor operates in a first operationmode, a first power supply voltage is supplied to the amplifiertransistor, when the amplifier transistor operates in a second operationmode, a second power supply voltage is supplied to the amplifiertransistor, the second power supply voltage being different than thefirst power supply voltage, and the power amplifier module furthercomprises: an operation mode notification terminal configured to receivea notification of an operation mode of the amplifier transistor; and abias control circuit configured to render the first bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thefirst operation mode, and configured to render the second bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thesecond operation mode.
 8. The power amplifier module according to claim4, wherein: when the amplifier transistor operates in a first operationmode, a first power supply voltage is supplied to the amplifiertransistor, when the amplifier transistor operates in a second operationmode, a second power supply voltage is supplied to the amplifiertransistor, the second power supply voltage being different than thefirst power supply voltage, and the power amplifier module furthercomprises: an operation mode notification terminal configured to receivea notification of an operation mode of the amplifier transistor; and abias control circuit configured to render the first bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thefirst operation mode, and configured to render the second bias circuitoperative in response to receipt of a notification at the operation modenotification terminal that the amplifier transistor is operating in thesecond operation mode.
 9. The power amplifier module according to claim5, wherein: the first power supply voltage is a power supply voltagethat causes the amplifier transistor to operate in accordance with anenvelope tracking scheme, and the second power supply voltage is a powersupply voltage that causes the amplifier transistor to operate inaccordance with an average power tracking scheme.
 10. The poweramplifier module according to claim 1, further comprising: an operationmode notification terminal configured to receive a notification of anoperation mode of the amplifier transistor; and a bias control circuitconfigured to render the first bias circuit operative in response toreceipt of a notification at the operation mode notification terminalthat the amplifier transistor is operating in a first operation mode,and configured to render both the first bias circuit and the second biascircuit operative in response to receipt of a notification at theoperation mode notification terminal that the amplifier transistor isoperating in a second operation mode.
 11. The power amplifier moduleaccording to claim 2, further comprising: an operation mode notificationterminal configured to receive a notification of an operation mode ofthe amplifier transistor; and a bias control circuit configured torender the first bias circuit operative in response to receipt of anotification at the operation mode notification terminal that theamplifier transistor is operating in a first operation mode, andconfigured to render both the first bias circuit and the second biascircuit operative in response to receipt of a notification at theoperation mode notification terminal that the amplifier transistor isoperating in a second operation mode.
 12. The power amplifier moduleaccording to claim 3, further comprising: an operation mode notificationterminal configured to receive a notification of an operation mode ofthe amplifier transistor; and a bias control circuit configured torender the first bias circuit operative in response to receipt of anotification at the operation mode notification terminal that theamplifier transistor is operating in a first operation mode, andconfigured to render both the first bias circuit and the second biascircuit operative in response to receipt of a notification at theoperation mode notification terminal that the amplifier transistor isoperating in a second operation mode.
 13. The power amplifier moduleaccording to claim 4, further comprising: an operation mode notificationterminal configured to receive a notification of an operation mode ofthe amplifier transistor; and a bias control circuit configured torender the first bias circuit operative in response to receipt of anotification at the operation mode notification terminal that theamplifier transistor is operating in a first operation mode, andconfigured to render both the first bias circuit and the second biascircuit operative in response to receipt of a notification at theoperation mode notification terminal that the amplifier transistor isoperating in a second operation mode.
 14. The power amplifier moduleaccording to claim 10, wherein when the amplifier transistor operates inthe second operation mode, a high gain is maintained at a higher outputlevel than when the amplifier transistor operates in the first operationmode.
 15. The power amplifier module according to claim 11, wherein whenthe amplifier transistor operates in the second operation mode, a highgain is maintained at a higher output level than when the amplifiertransistor operates in the first operation mode.
 16. The power amplifiermodule according to claim 12, wherein when the amplifier transistoroperates in the second operation mode, a high gain is maintained at ahigher output level than when the amplifier transistor operates in thefirst operation mode.
 17. The power amplifier module according to claim13, wherein when the amplifier transistor operates in the secondoperation mode, a high gain is maintained at a higher output level thanwhen the amplifier transistor operates in the first operation mode. 18.A power amplification method for operating a power amplifier module toperform power amplification, the power amplifier module comprising anamplifier transistor that amplifies an input signal and outputs theamplified signal, a first bias circuit that comprises a first biassupply transistor and that supplies an output current of the first biassupply transistor to the amplifier transistor as a bias current, and asecond bias circuit that comprises a second bias supply transistor andthat supplies a portion of an output current of the second bias supplytransistor to the amplifier transistor as the bias current, the secondbias circuit further comprising a current path along which a portion ofthe output current of the second bias supply transistor is returned tothe second bias circuit, the power amplification method comprising:supplying the bias current from the first bias circuit to the amplifiertransistor when the amplifier transistor is caused to operate inaccordance with an envelope tracking scheme; and supplying the biascurrent from the second bias circuit to the amplifier transistor whenthe amplifier transistor is caused to operate in accordance with anaverage power tracking scheme.
 19. A power amplification method foroperating a power amplifier module to perform power amplification, thepower amplifier module comprising an amplifier transistor that amplifiesan input signal and outputs the amplified signal, a first bias circuitthat comprises a first bias supply transistor and that supplies anoutput current of the first bias supply transistor to the amplifiertransistor as a bias current, and a second bias circuit that comprises asecond bias supply transistor and that supplies a portion of an outputcurrent of the second bias supply transistor to the amplifier transistoras the bias current, the second bias circuit further comprising acurrent path along which a portion of the output current of the secondbias supply transistor is returned to the second bias circuit, the poweramplification method comprising: switching between supplying the biascurrent from the first bias circuit to the amplifier transistor andsupplying the bias current from both the first bias circuit and thesecond bias circuit to the amplifier transistor, in accordance with asignal level output from the amplifier transistor.